The preparation of high-quality perovskite films with optimal morphologies is important for achieving high-performance perovskite photodetectors (PPDs). An effective strategy to optimize the morphologies is to add antisolvents during the spin-coating steps. In this work, a novel environment-friendly antisolvent tert-amyl alcohol (TAA) is employed first to improve the quality of perovskite films, which can effectively regulate the formation of an intermediate phase staged in between a liquid precursor phase and a solid perovskite phase due to its moderate polarity and further promote the homogeneous nucleation and crystal growth, thus leading to the formation of high-quality perovskite films and enhanced photodetector performance. As a result, the responsivity of the PPD reaches 1.56 A/W under the illumination of 532 nm laser with the power density of 6.37μW/cm2 at a bias voltage of -2V, which is good responsivity for PPDs with the vertical structure and only CH3NH3PbI3 perovskite as the photosensitive material. The corresponding detectivity reaches 1.47×1012 Jones, while the linear dynamic range reaches 110 dB. These results demonstrate that our developed green antisolvent TAA has remarkable advantages for the fabrication of high-performance PPDs and can provide a reference for similar research work.

Self-powered and flexible ultrabroadband photodetectors (PDs) are desirable in a wide range of applications. The current PDs based on the photothermoelectric (PTE) effect have realized broadband photodetection. However, most of them express low photoresponse and lack of flexibility. In this work, high-performance, self-powered, and flexible PTE PDs based on laser-scribed reduced graphene oxide (LSG)/CsPbBr3 are developed. The comparison experiment with LSG PD and fundamental electric properties show that the LSG/CsPbBr3 device exhibits enhanced ultrabroadband photodetection performance covering ultraviolet to terahertz range with high photoresponsivity of 100 mA/W for 405 nm and 10 mA/W for 118 μm at zero bias voltage, respectively. A response time of 18 ms and flexible experiment are also acquired at room temperature. Moreover, the PTE effect is fully discussed in the LSG/CsPbBr3 device. This work demonstrates that LSG/CsPbBr3 is a promising candidate for the construction of high-performance, flexible, and self-powered ultrabroadband PDs at room temperature.

Highly sensitive broadband photodetection is of critical importance for many applications. However, it is a great challenge to realize broadband photodetection by using a single device. Here we report photodetectors (PDs) based on three-dimensional (3D) graphene foam (GF) photodiodes with asymmetric electrodes, which show an ultra-broadband photoresponse from ultraviolet to microwave for wavelengths ranging from 102 to 106nm. Moreover, the devices exhibit a high photoresponsivity of 103A·W?1, short response time of 43 ms, and 3 dB bandwidth of 80 Hz. The high performance of the devices can be attributed to the photothermoelectric (PTE, also known as the Seebeck) effect in 3D GF photodiodes. The excellent optical, thermal, and electrical properties of 3D GFs offer a superior basis for the fabrication of PTE-based PDs. This work paves the way to realize ultra-broadband and high-sensitivity PDs operated at room temperature.

Because they possess excellent visible light absorption properties, lead-free colloidal copper-based chalcogenide quantum dots (QDs) have emerged in photoelectronic fields. By means of localized surface plasmonic resonance (LSPR), the absorption properties of QDs can be enhanced. In this paper, we fabricate a lead-free CuInSe2 QD field effect phototransistor (FEpT) by utilizing the LSPR enhancement of Au nanoparticles (NPs). The plasmonic FEpT demonstrates responsivity up to 2.7 μA·W 1 and a specific detectivity of 7×103 Jones at zero bias under illumination by a 532 nm laser, values that are enhanced by approximately 200% more than devices without Au NPs. Particularly, the FEpT exhibits a multi-wavelength response, which is photoresponsive to 405, 532, and 808 nm irradiations, and presents stability and reproducibility in the progress of ON–OFF cycles. Furthermore, the enhancement induced by Au NP LSPR can be interpreted by finite-difference time domain simulations. The low-cost solution-based process and excellent device performance strongly underscore lead-free CuInSe2 QDs as a promising material for self-powered photoelectronic applications, which can be further enhanced by Au NP LSPR.